AGR18030EF mosfet equivalent, lateral mosfet.
Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 10 W) — Error vector magnitude (EVM): 1.6% — Power gain: 15 dB www.DataSheet4U.com — Drain efficiency: 30%.
This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It i.
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